| ‘lllvVISHM _________________________________EE§9?1EE§9?7 www'V'Shay'C°m Vishay General Semiconductor ELEcTRIcAL cHARAcTERIsTIcs (TA = 25 °C unless otherwise noted) PARAMETER Nomous wtom/ard voltage TA : 125 °C Maximum instantaneous TA:125°C Typical junction capacitance 4.0 V, 1 MHZ Notes (1) Pulse test: 300 us pulse width, 1 % duty cycle (2) Pulse test: Pulse width g 40 ms Maximum reverse Current Rated VR PARAMETERIRATINGS AND cHARAcTERIsTIcs cuRvEs Typical thermal resistance Note (i) P.C.B. mounted with 0.32" x 0.32" (8 mm x 8 mm) copper pad areas. TL measured at lead terminal mount. I 13" diameter plastic tape and reel (TA : 25 °C unless otherwise noted) 3.0 I've or Inductive g 2.5 A E E 93 In S 2.0 3 O 4 E 5 in 1.5 3 3 O e I;od) 1.0 tom ._a>) ROB. Mounted on <( E B E S < 0.5 032"xo32"la rnrnxamml Copper Fad Areas 0 50 90 100 110 120 130 140 150 0 0.5 1.0 1.5 2.0 30 35 Lead Temperature (°C) Average Forward Current (A)Fig. 1 - Forward Current Derating Curve Fig. 2 - Forward Power Loss Characteristics Revision: 27-Mar-12 2 Document Number: 89071 For technical questions witl-lin your region: DiodesAmericas@vishay.Com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT To CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.c9m/doc?91000 |